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CPM Seminar
Quantitative two-dimensional carrier profiling of 180 nm NMOS and PMOS devices by Schottky Scanning Capacitance Microscopy Derek R. Oliver
Department of Electrical & Computer Engineering The principles of probe microscopy will be discussed in the context of the University of Manitoba SPM group's activities. In response to the semiconductor industry's need to determine two-dimensional dopant profiles of small devices, several solutions based on scanning probe microscopy (SPM) approaches have been developed. In order to demonstrate the capabilities and potential of the Schottky SCM technique, quantitative carrier profiling data via images of 180 nm NMOS and PMOS devices will be presented and discussed. The results demonstrate that this technique is capable of quantitative 2D characterization of semiconductor devices.
Tuesday, June 20th 2000, 15:30 |