Special CPM Seminar
Carbon nanotubes and semiconductor nanowires for quantum
nanodevice applications
Koji Ishibashi
Advanced Devices Laboratory RIKEN
In this talk, I review research activities in my group rather than talking
about specific topics to exchange information between McGill and RIKEN. In
my group, we are interested in quantum nanodevices such as quantum bits
(qubits) and quantum THz detectors, as well as nanofabrication in a molecular
scale. To make use of quantum effects, the smaller structures are required,
so that we use carbon nanotubes and semiconductor nanowires that are self
assembly formed with an extremely small diameter. We use single-wall carbon
nanotubes (SWCNTs), Si/Ge nanowires and InAs naowires, depending on the type
of quantum nanodevices. In this talk, we show main experimental results on
these devices listed below. Part of the works is done in collaboration with
NIMS and NTT basic research lab.
1) Towards spin qubit with SWCNT and Ge quantum dots
To realize the spin qubit, we have to begin with preparing a single spin
in a quantum dot (QD). To do so, there are two methods. The simplest
method is to prepare absolute one electron in the dot. The other method is
to realize an unpaired electron in the uppermost quantum level with many
electrons in the dot. The former method is conceptually simple, but is
not always easy in practice. To realize the latter condition, there are
requirements among energy scales with E (level spacing) much larger than
electron-electron interaction energies. We demonstrate each case with the
Ge QDs and SWCNT QDs where artificial atom behaviours are observed.
2) Towards Andreev qubit and study of transport physics with a large
spin-orbit interaction in InAs nanowires
The InAs nanowires are known to easily make Ohmic contacts with metallic
contacts. We have been studying basic properties of individual InAs
nanowires with superconducting contacts (SNS), which could be a basic
building block of the Andreev qubit. We will show basic transport
properties of the SNS structures, which includes supercurrent modulated
by gate voltage, its magnetic field and temperature dependence, and
microwave effects. These results indicate the dirty Josephson junction
behaviours.
3) Quantum response of the SWCNT quantum dots
One of the unique features of the SWCNT QDs is large energy scales, associated
with the artificial atom (QD), which fall in a teraherz (THz) range. This
fact made us to explore the quantum response of the SWCNT QDs to the THz
wave. In fact, we have observed the THz photon assisted tunnelling in the
Coulomb blockade oscillations with frequency-dependent satellite peaks.
4) SWCNT/Molecule heterustructures for molecular scale
nanostructures
Another unique feature of the SWCNT would be a possible chemical modification
of the nanotube ends and a surface. This makes it possible to fabricate
chemically bonded SWCNT/molecule heterojunctions. As examples, we show
chemically bonded individual SWCNT rings and SWCNT/molecule heterostructures
to fabricate a QD. The structures are characterized by a scanning tunnelling
microscope with simultaneous optical spectroscopy, such as Raman and
photo-current spectroscopy and the electric field modulation spectroscopy.
References
[1] S. Moriyama, T. Fuse, M. Suzuki, Y. Aoyagi,
K. Ishibashi, Phys. Rev. Lett. 94, 186806 (2005)
[2] T. Nishio, T. Kozakai, S. Amaha, M. Larsson,
H. Nilsson, H. Q. Xu, G. Q. Zhang, K. Tateno,
H. Takayanagi and K. Ishibashi, Nanotechnology, 44, 5701
(2011)
[3] Y. Kawano, T. Fuse, S. Toyokawa, T. Uchida,
K. Ishibashi, J. Appl. Phys. 103, 034307 (2008)
Thursday, November 24th 2011, 11:00
Ernest Rutherford Physics Building, R.E. Bell Conference Room (room 103)
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